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PD-94015
IRF5803
HEXFET(R) Power MOSFET
l l l l l
Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge
VDSS
-40V
RDS(on) max (m) )
112@VGS = -10V 190@VGS = -4.5V
ID
-3.4A -2.7A
Description
These P-channel HEXFET(R) Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET(R) power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
D
1 6
A D
D
2
5
D
G
3
4
S
T op V iew
TSOP-6
Absolute Maximum Ratings
Parameter
VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range
Max.
-40 -3.4 -2.7 -27 2.0 1.3 16 20 -55 to + 150
Units
V A
W mW/C V C
Thermal Resistance
Parameter
RJA Maximum Junction-to-Ambient
Max.
62.5
Units
C/W
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1
03/05/01
IRF5803
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Min. -40 --- --- --- -1.0 4.0 --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- 0.03 --- --- --- --- --- --- --- --- 25 4.5 3.5 43 550 88 50 1110 93 73
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, ID = -1mA 112 VGS = -10V, ID = -3.4 m 190 VGS = -4.5V, ID = -2.7A -3.0 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.4A -10 VDS = -32V, VGS = 0V A -25 VDS = -32V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 37 ID = -3.4A 6.8 nC VDS = -20V 5.3 VGS = -10V --- VDD = -20V --- ID = -1.0A ns --- RG = 6.0 --- VGS = -10V --- VGS = 0V --- pF VDS = -25V --- = 100kHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- 27 34 -2.0 A -27 -1.2 40 50 V ns nC
Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s
D
S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Surface mounted on 1 in square Cu board
Pulse width 400s; duty cycle 2%.
2
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IRF5803
100
VGS TOP -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM - 2.7V
100
VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM - 2.7V TOP
-ID, Drain-to-Source Current (A)
10
-ID, Drain-to-Source Current (A)
10
1
1
-2.7V
0.1
0.1
20s PULSE WIDTH Tj = 25C -2.7V
0.01 0.1 1 10 100
20s PULSE WIDTH Tj = 125C
0.01 0.1 1 10 100
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
2.0
-I D , Drain-to-Source Current (A)
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = -3.4A
1.5
10
TJ = 150 C
1.0
1
0.5
0.1 2.0
V DS = -25V 20s PULSE WIDTH 6.0 7.0 3.0 4.0 5.0 8.0
0.0 -60 -40 -20
VGS = -10V
0 20 40 60 80 100 120 140 160
-
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRF5803
2000 12 VGS = 0V, f = 100 KHZ C iss = Cgs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd
ID = -3.4A
-VGS , Gate-to-Source Voltage (V)
Cds
10
V DS=-32V V DS=-20V
1500
C, Capacitance(pF)
8
Ciss
1000
6
4
500
Coss Crss
0 1 10 100
2
0 0 5 10 15 20 25 30
- V , Drain-to-Source Voltage (V) DS
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ID, Drain-to-Source Current (A)
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R (on) DS
TJ = 150 C
10
10
TJ = 25 C
1
100sec 1 1msec TA = 25C TJ = 150C Single Pulse 0.1 1 10 -VDS , Drain-toSource Voltage (V) 100 10msec
0.1 0.4
V GS = 0 V
0.8 1.2 1.6
-VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF5803
3.5
VDS
3.0
RD
VGS RG
D.U.T.
+
-ID , Drain Current (A)
2.0 1.5 1.0 0.5
VGS
VGS
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0.0 25 50 75 100 125 150
10%
TC , Case Temperature ( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01
SINGLE PULSE (THERMAL RESPONSE)
0.1 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 0.0001 0.001 0.01 0.1 100
PDM t1 t2
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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-
2.5
VDD
5
IRF5803
RDS ( on ) , Drain-to-Source On Resistance ( )
( RDS(on), Drain-to -Source On Resistance )
0.20
0.40
VGS = -4.5V 0.30
0.15
0.10
ID = -3.4A
0.20
0.05
VGS = -10V 0.10
0.00 4.0 8.0 12.0 16.0
0.00 0.0 5.0 10.0 15.0 -ID , Drain Current ( A )
-VGS, Gate -to -Source Voltage (V)
Fig 12. Typical On-Resistance Vs. Gate Voltage
Fig 13. Typical On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
50K
QG QGS VG QGD
12V
.2F .3F
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a. Basic Gate Charge Waveform
Fig 14b. Gate Charge Test Circuit
6
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+
D.U.T.
-
VDS
IRF5803
30
2.8
25
ID = -250A
20
-VGS(th) ( V )
2.4
Power (W)
15
10 2.0 5
1.6 -75 -50 -25 0 25 50 75 100 125 150
0 0.001 0.010 0.100 1.000 10.000 100.000
TJ , Temperature ( C )
Time (sec)
Fig 15. Typical Threshold Voltage Vs. Junction Temperature
Fig 16. Typical Power Vs. Time
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IRF5803
TSOP-6 Package Outline
TSOP-6 Part Marking Information
EXAMPLE: T HIS IS AN SI3443DV WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR YEAR PART NUMBER Y 1 2 3 4 5 6 7 8 9 0 WORK WEEK 01 02 03 04 W A B C D DATE CODE
3A YW
T OP
WAFER LOT NUMBER CODE
XXXX
BOT TOM
2001 2002 2003 2004 2005 1996 1997 1998 1999 2000
24 25 26
X Y Z
PART NUMBER CODE REFERENCE: 3A = SI3443DV 3B = IRF5800 3C = IRF5850 3D = IRF5851 3E = IRF5852 3I = IRF5805 3J = IRF5806 DAT E CODE EXAMPLES : YWW = 9603 = 6C YWW = 9632 = FF
WW = (27-52) IF PRECEDED BY A LET T ER YEAR 2001 2002 2003 2004 2005 1996 1997 1998 1999 2000 Y A B C D E F G H J K WORK WEEK 27 28 29 30 W A B C D
50 51
X Y
8
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IRF5803
TSOP-6 Tape & Reel Information
Data and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.03/01
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